Session 2.4.3

High efficiency based solar cells and modules from established market technologies (Si, chalcogenide and III-V based materials).


Silicon, CdTe, CIGS, III-V solar cells and modules, textures, surface passivation, metallization, light management, new processes and materials for junction formation, Tandem devices (e.g. perovskite on c-Si, CIGS/perovskite, Si-III V, etc), Advanced modelling and characterization techniques, Flexible solar cells



  • KN : Stefan GLUNZ (ISE Fraunhofer, Freiburg, DE)

  • IL1: Marika EDOFF (Uppsala University, SE)

  • IL2: David CAHEN (Weizman Institute of science, Rehovo, IL)


Today’s world wide PV market is dominated by the crystalline silicon technology (>90 %). The remainder is based on thin film solar cell technologies and consists mainly of based thin film CdTe, Cu(In,Ga)(S,Se)2 (CIGSSe), and amorphous Si solar cells. The competitiveness of a photovoltaic module is largely determined by the cost per unit power output. While thin film solar cells have the potential for low cost production, Si based solar cells have shown important price reduction during the last years. This subarea aims to bring together actors on these different technologies and to provide a platform for presenting recent and on-going researches for further efficiency improvements and cost reduction employing novel carrierselective passivating contact schemes, light management, interfacial optimization and tandem multi-junction architectures, in particular those that combine silicon absorbers with organic or inorganic materials such as perovskite.